| PART |
Description |
Maker |
| DFE201610E-2R2M-18 |
nullRated current (Isat) is specified when the decrease of the initial inductance value at 30%.
|
Murata Manufacturing Co...
|
| DFE201208S-1R0M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201208S-1R5M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| 1239AS-H-100M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode
Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB
Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70
CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| BD241CFP |
Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA 晶体管|晶体管|叩| 100V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Samsung Semiconductor Co., Ltd.
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Z8913829ASC Z8913920FSC |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA
8-BIT MICROCONTROLLER 8位微控制
|
TOKO, Inc.
|
| X5165PI X5163V14I-2.7T1 X5165V14-2.7T1 X5165V14I-2 |
CPU Supervisor with 16Kbit SPI EEPROM Description
THYRISTOR MODULE, 95A, 0800V; Thyristor/Triac type:Thyristor; Voltage, Vdrm:800V; Current, It rms:150A; Current, Itsm:2000A; Current, Igt:150mA; Voltage, Vgt:3.0V; Case style:SEMIPACK 1; Centres, fixing:80mm; Current, It av:95A; RoHS Compliant: Yes
RTC Module With CPU Supervisor
; Repetitive Reverse Voltage Max, Vrrm:1600V; Current, It av:70A; Forward Current:125A; Operating Temp. Max:125 ; Package/Case:SEMIPACK 1; Peak
|
http://
Intersil Corporation
|
| KPY32-RK Q62705-K266 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
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